atp102 no.a1479-1/7 1 : gate 2 : drain 3 : source 4 : drain sanyo : atpa k 0.7 0.4 0.55 9.5 7.3 0.5 1.7 4.6 6.05 13 2 6.5 0.6 4 0.8 0.5 1.5 0.4 2.6 4.6 0.4 0.1 2.3 2.3 features ? low on-resistance ? large current ? slim package ? 4.5v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d --40 a drain current (pw 10 s) i dp pw 10 s, duty cycle 1% --120 a allowable power dissipation p d tc=25 c40w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 58 mj avalanche current *2 i av 20 a note : * 1 v dd =10v, l=200 h, i av =20a * 2 l 200 h, single pulse package dimensions unit : mm (typ) 7057-001 61312 tkim/52709pa msim tc-00001968 sanyo semiconductors data sheet atp102 p-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network ordering number : ENA1479A atp102-tl-h product & package information ? package : atpak ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl atp102 lot no. 1 3 4,2
atp102 no.a1479-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds =--10v, i d =--20a 29 s static drain-to-source on-state resistance r ds (on)1 i d =--20a, v gs =--10v 14 18.5 m r ds (on)2 i d =--10a, v gs =--4.5v 22 31 m input capacitance ciss v ds =--10v, f=1mhz 1490 pf output capacitance coss 360 pf reverse transfer capacitance crss 270 pf turn-on delay time t d (on) see speci ed test circuit. 11 ns rise time t r 135 ns turn-off delay time t d (off) 135 ns fall time t f 185 ns total gate charge qg v ds =--15v, v gs =--10v, i d =--40a 34 nc gate-to-source charge qgs 4.2 nc gate-to-drain ?miller? charge qgd 11.5 nc diode forward voltage v sd i s =--40a, v gs =0v --0.99 --1.5 v switching time test circuit ordering information device package shipping memo atp102-tl-h atpak 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --20a r l =0.75 v dd = --15v v out v in 0v --10v v in atp102
atp102 no.a1479-3/7 | y fs | -- i d r ds (on) -- v gs r ds (on) -- tc i d -- v ds i d -- v gs i s -- v sd sw time -- i d drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a forward transfer admittance, | y fs | -- s ciss, coss, crss -- v ds it14690 it14687 --60 --40 --20 160 0 --30 --10 --15 --20 --25 -- 5 1000 100 2 2 it14694 it14692 it14691 --0.1 --1.0 23 57 3 --1.2 --1.0 --1.1 --0.6 --0.5 --0.4 --0.8 --0.9 --0.7 --0.3 --0.001 --0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 --0.1 --1.0 --10 --100 5 7 7 2 10 1.0 5 7 3 2 2 --10 357 --100 57 23 --0.1 --1.0 23 57 2 --10 357 --100 57 23 0 20 40 60 80 100 120 140 3 5 3 5 7 7 75 c 25 c tc= --25 c --25 c tc=75 c single pulse tc= --25 c 25 c 75 c tc=75 c 25 c --25 c ciss crss it14693 10 100 2 3 5 5 7 7 7 2 3 t d (off) v dd = --15v v gs = --10v f=1mhz t r --0.6 --0.4 --0.2 --0.8 --1.0 --1.2 --2.0 --1.4 --1.6 --1.8 0 0 -- 5 --10 --40 --35 --25 --30 --15 --20 0 -- 5 --10 --50 --35 --40 --30 --25 --45 --20 --15 0 it14689 -- 2 -- 1 -- 4 -- 3 -- 6 -- 5 -- 8 -- 9 --7 --10 --11 --16 --12 --14 --15 --13 0 40 15 30 25 20 35 5 10 5 10 50 40 35 25 20 15 30 45 it14688 --0.5 --1.5 --2.0 --1.0 --2.5 --4.5 --4.0 --5.0 --3.5 --3.0 0 --4.0v v gs = --3.5v --16.0v v ds = --10v single pulse t f 25 c v gs = --4.5v, i d = --10a v gs = --10v , i d = -- 2 0a --8.0v coss t d (on) --4.5v --6.0v --10.0v i d = --10a --20a v ds = --10v single pulse tc=25 c single pulse v gs =0v single pulse tc=25 c single pulse
atp102 no.a1479-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 it10478 a s o drain-to-source voltage, v ds -- v drain current, i d -- a p d -- tc allowable power dissipation, p d -- w case temperature, tc -- c it14695 0 5 10 25 20 35 30 15 40 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 v ds = --15v i d = --40a it14697 0 0 20 40 60 80 100 140 120 40 35 25 30 15 20 5 10 45 160 i dp = --120a i d = --40a 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). 100 s 10 s it14696 --0.1 --1.0 2 3 5 7 2 3 5 7 2 3 5 2 3 7 --10 --0.1 --1.0 23 57 2 --10 357 235 --100 tc=25 c single pulse pw 10 s
atp102 no.a1479-5/7 taping speci cation atp102-tl-h
atp102 no.a1479-6/7 outline drawing land pattern example atp102-tl-h mass (g) unit 0.266 * for reference mm unit: mm 6.5 6.7 1.6 2 2.3 2.3 1.5
atp102 ps no.a1479-7/7 this catalog provides information as of june, 2012. speci cations and information herein are subject to change without notice. note on usage : since the atp102 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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